# \[BOOK|TXT] ESD : RF Technology and Circuits

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The current-flow through the emitter to either element does not distribute symmetrically; this leads to a higher series resistance, base or collector internal voltage drops, current crowding, and nonuniform current flow; this can lead to higher peak current density. This evolution is a result of constant increase in the integration level of semiconductor devices and reduction in their cost. Bipolar transistors have heavily doped subcollector regions. Electrical and thermal shunts will be discussed as well.\
&#x20;![ESD : RF Technology and Circuits](http://ecx.images-amazon.com/images/I/41ioivcRJ3L._SY344_BO1,204,203,200_.jpg)\\

Treat the dual diode network as a capacitor only. Estimate the voltage differential when the network is conducting current pin-to-pin. At the same time, new semiconductor devices have been proposed, such as silicon carbide and silicon germanium, as well as other exotic devices. Given a capacitor in series with a resistor element, this circuit can be transformed into an equivalent circuit of a resistor and capacitor in parallel for which it achieves the same quality factor Q.\
&#x20;![ESD : RF Technology and Circuits](http://www.european-coatings.com/var/ezflow_site/storage/images/european-coatings/home/raw-materials-technologies/technologies/using-nanotechnology-to-produce-conductive-ink/17636949-1-eng-GB/Using-nanotechnology-to-produce-conductive-ink.jpg)\\

**SCR-Based ESD Protection Designs for RF ICs** - At the position x ¼ W, the hole current is MpIp.\
&#x20;![ESD : RF Technology and Circuits](https://patentimages.storage.googleapis.com/US20060256489A1/US20060256489A1-20061116-D00007.png)\\

I have already had this book for a while. It has good amount of examples and plenty of new and updated data points and the latest developments in the field. The more my knowledge grew, the more I have appreciated returning to this book as a reference. Essentially, this means that all the latest developments in the field is published in an easy-to-understand series. The completeness of coverage is impressive. For example, device physics is becoming more and more important as technologies advance. In this book, physics and mechanisms are Tecbnology wherever needed to enhance readers' understanding. The explanations are accurate and easy to follow. There are lots of discussions on architectural level in Chapter 4, which are particularly helpful to the learning of design. Thorough treatment in SiGe Ch.\\
